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| MJE5852 HIGH VOLTAGE PNP POWER TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE PNP TRANSISTOR HIGH VOLTAGE CAPABILITY APPLICATIONS: SWITCHING REGULATORS s MOTOR CONTROL s INVERTERS s DESCRIPTION The MJE5852 is manufactured using high voltage PNP multiepitaxial technology for high switching speed and high voltage capability. It is intended for use in high frequency and efficiency converters, switching regulators and motor control. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5ms) Base Current Base Peak Current (t p < 5ms) Total Dissipation at T c 25 C o Value 450 400 7 8 16 4 8 80 -65 to 150 150 Unit V V V A A A A W o o Storage Temperature Max. Operating Junction Temperature C C For PNP type voltage and current values are negative. July 1997 1/4 MJE5852 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.56 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 450 V V EB = 6 V I C = 10 mA 400 Min. Typ. Max. 500 1 Unit A mA V V CEO(sus) Collector-Emitter Sustaining Voltage (I B =0) V CE(sat) V BE(sat) h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Storage Time Fall Time IC = 4 A IC = 8 A IC = 4 A IC = 2 A IC = 5 A IB = 1 A IB = 3 A IB = 1 A V CE = 5 V V CE = 5 V V CC = 250 V t p = 40 s 15 5 2 5 1.5 V V V ts tf IC = 4 A I B1 = -IB2 = 1 A 2 0.5 s s Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP type voltage and current values are negative. 2/4 MJE5852 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 3/4 MJE5852 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4 |
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